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US 2024/0186147 A1Published application
Surface treatment method, dry etching method, cleaning method, semiconductor device manufacturing method, and etching device
AssigneeCentral Glass Company, Limited
InventorsHikaru KITAYAMA, Kunihiro YAMAUCHI, Akiou KIKUCHI
Life of this patent
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Abstract
The present disclosure aims to provide a surface treatment method using a gas composition capable of removing a metal nitride at low temperatures without using plasma. The present disclosure relates to a surface treatment method including bringing a β-diketone and NO2 into contact with a surface of a workpiece.
Claims16
1-26. (canceled)
A dry etching method, comprising:
- bringing a β-diketone and NO2 into contact with an etching target film for etching in a non-plasma state, the etching target film being formed on a surface of a workpiece and containing a nitride of a metal.
Dependencies are inferred from the claim text.