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US 2024/0186097 A1Published application
Silicon-Based Vacuum Transistors and Integrated Circuits
AssigneePurdue Research Foundation
InventorsSaeed MOHAMMADI, Shabnam GHOTBI
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Abstract
A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate.
Claims15
A field emitter array (FEA) vacuum transistor, comprising:
- a substrate;
- and
- a plurality of nanorods formed of a first polarity dopant on the substrate.
Dependencies are inferred from the claim text.