Method of manufacturing silicon carbide single crystal and silicon carbide single crystal
AssigneesDenso Corporation, Toyota Jidosha Kabushiki Kaisha, MIRISE Technologies Corporation
InventorsSoma SAKAKIBARA, Takahiro KANDA
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Abstract
A method of producing a silicon carbide single crystal includes: arranging a seed crystal in a heating container that defines a reaction chamber; and growing a silicon carbide single crystal on a surface of the seed crystal by supplying a supply gas containing a silicon carbide raw material gas while heating the reaction chamber. In the growing of the silicon carbide single crystal, the silicon carbide single crystal is grown by controlling a total pressure of the supply gas, which is an internal pressure of the heating container, to 40 kPa or more while controlling a flow rate of the silicon carbide raw material gas to a target value.
Claims10
A method of producing a silicon carbide single crystal comprising:
- arranging a seed crystal in a heating container having a hollow shape forming a reaction chamber;
- and
- growing a silicon carbide single crystal on a surface of the seed crystal by supplying a supply gas containing a silicon carbide raw material gas while heating the reaction chamber, wherein
- the growing of the silicon carbide single crystal includes growing the silicon carbide single crystal by controlling a total pressure of the supply gas, which is an internal pressure of the heating container, to 40 kPa or more while controlling a flow rate of the silicon carbide raw material gas to a target flow rate.
A silicon carbide single crystal comprising:
- a Si plane on one surface and a C plane on the other surface, wherein
- a density of a basal plane dislocation is lower on the C plane than on the Si plane, and
- a density of dislocation decreases at a reduction rate of 180 cm−2/mm or more in a direction from the Si plane to the C plane.
Dependencies are inferred from the claim text.