Power conversion device and method for controlling power conversion device
AssigneeMitsubishi Electric Corporation
InventorYoshitaka MIYAJI
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Abstract
A power conversion device includes a semiconductor element, a temperature sensor, a sealing material sealing the semiconductor element, and a driving circuit for the semiconductor element. The temperature sensor measures the temperature of either or both of the semiconductor element and the sealing material. The driving circuit controls a voltage steepness or a voltage crest value to be applied to the semiconductor element, on the basis of temperature information measured by the temperature sensor.
Claims21
A power conversion device comprising:
- a plurality of semiconductor element;
- one or a plurality of temperature sensors;
- a sealing material sealing the semiconductor elements;
- and
- a driving circuit for the plurality of semiconductor elements, wherein
- the one or plurality of temperature sensors measure a temperature of either or both of the plurality of semiconductor elements and the sealing material, and
- on the basis of temperature information measured by the one or plurality of temperature sensors, the driving circuit
- controls a voltage steepness or a voltage crest value to be applied to each of the plurality of semiconductor elements, individually, or
- controls the voltage steepnesses or the voltage crest values to be applied to the plurality of semiconductor elements, using a common value.
A power conversion device control method performed using a power conversion device including a plurality of semiconductor elements, one or a plurality of temperature sensors, a sealing material sealing the semiconductor elements, and a driving circuit for the plurality of semiconductor elements, the method comprising:
- a temperature measurement step of measuring a temperature of either or both of the plurality of semiconductor elements and the sealing material by the one or plurality of temperature sensors;
- a control value selection step of selecting a voltage steepness or a voltage crest value to be applied to the plurality of semiconductor elements on the basis of temperature information measured by the one or plurality of temperature sensors;
- a control value adjustment step of adjusting the voltage steepness or the voltage crest value to be applied to the plurality of semiconductor elements, to the selected voltage steepness or voltage crest value;
- and
- in the control value selection step, and the control value adjustment step,
- the process is performed for the voltage steepness or the voltage crest value to be applied to each of the plurality of semiconductor elements, as an individual value, or
- the process is performed for the voltage steepnesses or the voltage crest values to be applied to the plurality of semiconductor elements, as a common value.
(canceled)
Dependencies are inferred from the claim text.