Light-emitting device, three-dimensional shaping apparatus, and head-mounted display

Abstract

A light-emitting device includes a first multi layer film mirror composed of a plurality of first semiconductor layers having first conductivity type, a second multi layer film mirror, a light-emitting layer provided between the first multi layer film mirror and the second multi layer film mirror, a GaN-based semiconductor layer having second conductivity type different from the first conductivity type, the GaN-based semiconductor layer being provided between the light-emitting layer and the second multi layer film mirror, a second semiconductor layer having the second conductivity type, the second semiconductor layer including a first portion provided between the GaN-based semiconductor layer and the second multi layer film mirror, and a second portion not overlapping the second multi layer film mirror as viewed in a lamination direction of the first multi layer film mirror and the light-emitting layer, and an electrode provided at the second portion. A band gap of a material of the second semiconductor layer is greater than a band gap of a material of the light-emitting layer, and smaller than a band gap of a material of the GaN-based semiconductor layer.

Dependencies are inferred from the claim text.