Micro light-emitting diode and display panel

Abstract

A micro light-emitting diode and a display panel are provided. The micro light-emitting diode includes a semiconductor epitaxial stacked layer including a first semiconductor layer, a second semiconductor layer and an active layer therebetween; a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The second semiconductor layer includes an N-type gallium phosphide (GaP) window layer, and the N-type GaP window layer plays a role in current spreading. The problem of low luminous efficiency of the micro light-emitting diode at a low current density can be solved and the luminous efficiency of the micro light-emitting diode at a low current density can be improved.

Dependencies are inferred from the claim text.