Semiconductor device

A semiconductor device, comprising:

• a semiconductor substrate;
• an epitaxial layer disposed on the semiconductor substrate, wherein the epitaxial layer is of a first conductivity type;
• a plurality of first metal structures disposed in the epitaxial layer, wherein the first metal structures extend parallelly to each other along a first direction, and each of the first metal structures has a first width in a second direction;
• a plurality of first doped regions disposed in the epitaxial layer and being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type, and each of the first doped regions extends from below each of the first metal structures to a sidewall of each of the first metal structures;
• a plurality of second metal structures disposed in the epitaxial layer, wherein the second metal structures extend parallelly to each other along the first direction, and each of the second metal structures has a second width in the second direction, wherein the first width is greater than the second width;
• a plurality of second doped regions disposed in the epitaxial layer and being of the second conductivity type, wherein each of the second doped regions extends from below each of the second metal structures to a sidewall of each of the second metal structures;
• a conductive layer disposed under the semiconductor substrate;
• and
• a Schottky layer disposed on the epitaxial layer;
• wherein the first metal structure is between two adjacent second metal structures, and the second metal structure is between two adjacent first metal structures.