Thin film transistor including a hydrogen-blocking dielectric barrier and methods for forming the same

A semiconductor device comprising:

• a single crystalline silicon substrate;
• field effect transistors including a respective portion of the single crystalline silicon substrate as a respective channel;
• lower-level dielectric material layers overlying the field effect transistors and embedding lower-level metal interconnect structures therein;
• an insulating matrix layer overlying the lower-level dielectric material layers and including an opening therein;
• a hydrogen-blocking dielectric barrier layer overlying the insulating material layer;
• a gate electrode located within the opening on the hydrogen-blocking dielectric barrier layer;
• and
• a stack of a gate dielectric and a semiconducting metal oxide plate overlying a top surface of the gate electrode and horizontally-extending portions of the hydrogen-blocking dielectric barrier layer that overlie the insulating matrix layer.

A method of forming a semiconductor device, comprising:

• forming a combination of an insulating matrix layer, a hydrogen-blocking dielectric barrier layer, and a gate electrode over a substrate, wherein the gate electrode is laterally surrounded by vertically-extending portions of the hydrogen-blocking dielectric barrier layer and by the insulating matrix layer;
• forming a stack of a gate dielectric and a semiconducting metal oxide plate over the gate electrode;
• and
• forming a source electrode and a drain electrode on end portions of the semiconducting metal oxide plate.