Ic structure with gate electrode fully within v-shaped cavity

An integrated circuit (IC) structure, comprising:

• a V-shaped cavity in a semiconductor substrate;
• a source region and a drain region on opposing sides of the V-shaped cavity;
• and
• a gate structure including a gate dielectric layer, spacers, and a gate electrode on the gate dielectric layer between the spacers,
• wherein the gate electrode has substantially vertical sides and a V-shaped bottom surface corresponding to a surface of the gate dielectric layer on a lower portion of the V-shaped cavity, and an upper surface of the gate electrode and an upper surface of the spacers are coplanar with an upper surface of the semiconductor substrate.

A method comprising:

• forming a V-shaped cavity in a semiconductor substrate;
• filling the V-shaped cavity with a spacer material;
• forming an opening in the spacer material, creating two spacers and exposing a surface of a lower portion of the V-shaped cavity;
• forming a gate dielectric layer on the surface of the lower portion of the V-shaped cavity;
• forming a gate electrode over the gate dielectric layer and between the spacers, wherein the gate electrode between the spacers, the spacers and the gate dielectric layer are fully within the V-shaped cavity;
• and
• forming a source region and a drain region on opposing sides of the V-shaped cavity.