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US 2024/0178283 A1Published application
Ldmos device and method of fabrication of same
AssigneeTexas Instruments Incorporated
InventorJingjing Chen
Life of this patent
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Abstract
An LDMOS device includes a semiconductor substrate with an epitaxial layer that comprises a body region and a drain drift region. A drain region is formed in the drain drift region and a source region is formed in the body region. A gate shield may be formed over a gate shield dielectric layer disposed over a gate electrode, the gate shield having a variable length and tied to the source that is provided with a body connection via a deep trench contact.
Claims21
A semiconductor device, comprising:
- a semiconductor substrate including an epitaxial layer, the epitaxial layer including a body region having a first conductivity type and a drain drift region having a second, opposite, conductivity type;
- a gate dielectric layer over the body region and extending over a junction between the body region and the drain drift region;
- a gate electrode over the gate dielectric layer;
- a drain region having the second conductivity type in the drain drift region;
- a field relief dielectric layer over the drain drift region, the field relief dielectric layer extending from the gate dielectric layer toward the drain region;
- a source region having the second conductivity type in the body region, the source region formed proximate to the gate electrode;
- a gate shield dielectric layer over the gate electrode;
- and
- a gate shield over the gate shield dielectric layer, the gate shield coupled to a trench contact electrically contacting the source region and extending over at least a portion of the gate electrode.
6 more elements
A method of fabricating a semiconductor device, comprising:
- forming a body region and a drain drift region in an epitaxial layer of a semiconductor substrate, the body region having a first conductivity type and the drain drift region having a second, opposite, conductivity type;
- forming a gate dielectric layer over the body region, the gate dielectric layer extending over a junction between the body region and the drain drift region;
- forming a field relief dielectric layer over the drain drift region, the field relief dielectric layer extending from the gate dielectric layer and terminating in a bird's beak;
- forming a gate electrode over the gate dielectric layer;
- forming a drain region having the second conductivity type in the drain drift region, the drain region formed proximate to the bird's beak;
- forming a source region having the second conductivity type in the body region, the source region formed proximate to the gate electrode;
- forming a gate shield dielectric layer over the gate electrode;
- and
- forming a gate shield over the gate shield dielectric layer, the gate shield coupled to a trench contact electrically contacting the source region and extending over at least a portion of the gate electrode.
6 more elements
Dependencies are inferred from the claim text.