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US 2024/0178276 A1Published application
Semiconductor device
AssigneeRohm Co., Ltd.
InventorsSatoshi IWAHASHI, Jun KOBAYASHI, Kazuyoshi MAKI
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Abstract
There is provided a semiconductor device including a semiconductor layer having a first conductivity type and including a first surface and a second surface on an opposite side of the first surface, a plurality of element structures formed in the first surface of the semiconductor layer at equal intervals in one direction, and a super junction structure formed in the semiconductor layer.
Claims14
A semiconductor device, comprising:
- a semiconductor layer having a first conductivity type and including a first surface and a second surface on an opposite side of the first surface;
- a plurality of element structures formed in the first surface of the semiconductor layer at equal intervals in one direction;
- and
- a super junction structure formed in the semiconductor layer,
- wherein each of the plurality of element structures includes:
- a body region having a second conductivity type and formed in the first surface of the semiconductor layer;
- and
- a first region having the first conductivity type and formed in a surface of the body region,
- wherein the super junction structure includes a plurality of column layers having the second conductivity type formed in the semiconductor layer at equal intervals in the one direction and extending in a thickness direction of the semiconductor layer, and
- wherein an inter-body region pitch, which is an arrangement interval of the body regions of the plurality of element structures in the one direction, is different from an inter-column layer pitch, which is an arrangement interval of the plurality of column layers in the one direction.
7 more elements
Dependencies are inferred from the claim text.