Integrated circuit device

An integrated circuit device comprising:

• a plurality of fin-type active regions protruding in a vertical direction from a substrate and extending parallel to each other in a first horizontal direction, the plurality of fin-type active regions being spaced apart from each other in a second horizontal direction that intersects with the first horizontal direction;
• a device isolation film adjacent to the plurality of fin-type active regions;
• a plurality of first gate lines extending lengthwise in the second horizontal direction on the plurality of fin-type active regions;
• a plurality of second gate lines separated from the plurality of first gate lines in the second horizontal direction by a dummy active fin between a first fin-type active region and a second fin-type active region, wherein the dummy active fin protrudes in the vertical direction from the substrate and extends lengthwise in the first horizontal direction;
• and
• a gate cut insulating pattern extending lengthwise in the first horizontal direction between the plurality of first gate lines and the plurality of second gate lines and overlapping the dummy active fin in the vertical direction,
• wherein the device isolation film comprises a first local isolation portion between the first fin-type active region and the dummy active fin and a second local isolation portion between the second fin-type active region and the dummy active fin.

An integrated circuit device comprising:

• a first fin-type active region and a second fin-type active region, which protrude in a vertical direction from a substrate and are adjacent to each other;
• a device isolation film covering both sidewalls of each of the first fin-type active region and the second fin-type active region;
• a first nanosheet stack, including at least one nanosheet, arranged over the first fin-type active region;
• a first gate line surrounding the first nanosheet stack;
• a second nanosheet stack, including at least one nanosheet, arranged over the second fin-type active region;
• a second gate line surrounding the second nanosheet stack;
• a dummy active fin separating the first fin-type active region from the second fin-type active region and protruding in the vertical direction from the substrate;
• a gate cut insulating pattern separating the first gate line from the second gate line, wherein the gate cut insulating pattern is on the dummy active fin in the vertical direction, and the gate cut insulating pattern extends above the first gate line and the second gate line;
• a first gate dielectric film separating the at least one nanosheet of the first nanosheet stack from the first gate line, wherein the first gate dielectric film contacts a first sidewall of the gate cut insulating pattern;
• and
• a second gate dielectric film separating the at least one nanosheet of the second nanosheet stack from the second gate line, wherein the second gate dielectric film contacts a second sidewall of the gate cut insulating pattern opposite the first sidewall,
• wherein the device isolation film comprises a first local isolation portion between the first fin-type active region and the dummy active fin, and a second local isolation portion between the second fin-type active region and the dummy active fin.