Semiconductor device manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsHIROSHI SEKINE, KAZUHIRO MORIMOTO, KOSEI UEHIRA
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AssigneeCanon Kabushiki Kaisha
InventorsHIROSHI SEKINE, KAZUHIRO MORIMOTO, KOSEI UEHIRA
Estimating the term…
A semiconductor device manufacturing method including: preparing a first substrate having a first plane and a second plane facing the first plane; preparing a second substrate having a third plane and a fourth plane facing the third plane; forming a first semiconductor device and a first wiring layer near the first plane in the first substrate; forming an insulating region near the third plane in the second substrate; after the forming the insulating region, forming a second semiconductor device and a second wiring layer near the third plane; after the forming the second semiconductor device and the second wiring layer, thinning the second substrate from the fourth plane to expose the insulating region; after exposing, forming a through-electrode configured to penetrate through the insulating region and be connected to the second wiring layer; and joining the first and second substrates so as to be electrically connected to each other.
A semiconductor device manufacturing method comprising:
A photoelectric conversion system comprising:
A moving object including a semiconductor device formed by using a manufacturing method including:
Dependencies are inferred from the claim text.