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US 2024/0178217 A1Published application
Semiconductor device
AssigneeNexperia B.V.
InventorsVasantha Kumar Vaddagere Nagaraju, Hans-Martin Ritter
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Abstract
A semiconductor device is provided, more particularly, a semiconductor controlled rectifier device (SCR) device, which achieves low capacitance, low trigger voltage, fast turn-on, and low on-resistance. Additionally, the semiconductor controlled rectifier device (SCR) device can achieve low capacitance, low trigger voltage, fast turn-on, and low on-resistance at the same time.
Claims18
A semiconductor device comprising:
- a first layer doped with a first type of charge carriers;
- a second layer doped with a second type of charge carriers different from the first type of charge carriers;
- a third layer doped with the first type of charge carriers;
- a fourth layer doped with the second type of charge carriers, wherein the first, second, third and fourth layers form a Shockley diode;
- an input terminal electrically connected with the first layer;
- and
- an output terminal electrically connected with the fourth layer;
- wherein the first, second and third layers form a bipolar junction transistor (BJT), and the second, third and fourth layers form a second BJT, wherein the second layer has a junction element electrically connected to the third layer, wherein the third layer comprises a high dopant region adjoining the second layer, and wherein the junction element is a short.
5 more elements
Dependencies are inferred from the claim text.