Semiconductor package conductive terminals with reduced plating thickness

A method for manufacturing a semiconductor package, comprising:

• forming a copper member on a surface;
• applying a photoresist to the copper member and the surface;
• performing a first heating of the photoresist at a temperature ranging from 120 degrees Celsius to 130 degrees Celsius for 14 to 17 minutes;
• after performing the first heating, applying light energy in a range from 1950 milliJoules per centimeter squared to 2050 milliJoules per centimeter squared for 780 to 820 milliseconds per shot minutes to expose the photoresist;
• after performing the exposure, performing a second heating of the photoresist at a temperature ranging from 104 degrees Celsius to 106 degrees Celsius for 3 to 5 minutes;
• after performing the second heating, developing the photoresist by applying developer solution puddles to the photoresist between 10 times and 12 times, wherein the performance of the first heating, the exposure, the second heating, and the developing produce a cavity in the photoresist above the copper member, the cavity having a first volume with a first diameter and a second volume with a second diameter larger than the first diameter, the second volume more proximal to the copper member than the first volume;
• forming a nickel member in the second volume;
• and
• forming a palladium member in the first volume.

A semiconductor package, comprising:

• a copper member having first and second surfaces opposing each other, the first surface of the copper member coupled to a circuit;
• a nickel member having first and second surfaces opposing each other, the first surface of the nickel member and having a same area as the second surface of the copper member, the second surface of the nickel member having a smaller area than the first surface of the nickel member;
• a palladium member having first and second surfaces opposing each other, the first surface of the palladium member coupled to and having a same area as the second surface of the nickel member;
• and
• a conductive member coupled to the second surface of the palladium member.

A semiconductor package, comprising:

• a copper member coupled to a circuit;
• a nickel member having first and second surfaces opposite each other, the first surface of the nickel member coupled to the copper member, the second surface of the nickel member having an area smaller than 95% of an area of the first surface of the nickel member;
• a palladium member having first and second surfaces opposite each other, the first surface of the palladium member coupled to the second surface of the nickel member;
• and
• a conductive member coupled to the second surface of the palladium member.