Etch-back opening with protective fill structure
AssigneeMicron Technology, Inc.
InventorsKimball Davis LOWRY, Avishesh DHAKAL
Life of this patent
Estimating the term…
Abstract
Implementations described herein relate to a semiconductor substrate assembly and methods of manufacturing. The substrate assembly may include a top insulator layer and a conductive layer below the top insulator layer. The conductive layer may include an end of a conductive structure. The substrate assembly may include a bottom insulator layer below the conductive layer. The substrate assembly may include a protective fill structure. The protective fill structure may be adjacent to the end of the conductive structure and pass at least partially through the top insulator layer to the bottom insulator layer.
Claims20
A semiconductor device assembly, comprising:
- a substrate comprising:
- an insulator layer;
- a circuit layer below the insulator layer and comprising:
- a circuit structure;
- an isolation region adjacent to the circuit structure;
- and
- a protective fill structure in the isolation region;
- and
- a semiconductor die electrically connected to the substrate via a plurality of electrical connections.
A substrate assembly, comprising:
- a top insulator layer;
- a conductive layer below the top insulator layer and comprising:
- an end of a conductive structure;
- a bottom insulator layer below the conductive layer;
- and
- a protective fill structure adjacent to the end of the conductive structure and passing at least partially through the top insulator layer to the bottom insulator layer.
A method, comprising:
- forming a conductive structure;
- forming an insulator layer above the conductive structure;
- forming a solder resist layer above the insulator layer;
- forming an opening through the solder resist layer and the insulator layer;
- and
- forming a protective fill structure in the opening and adjacent to an end of the conductive structure.
Dependencies are inferred from the claim text.