Nanomolding of electrical interconnects

Abstract

A method for forming semiconductor interconnects includes establishing a nanostructure in a substrate. The nanostructure may be embodied as a trench or other structure that extends from a first semiconductor device or structure to a second semiconductor device or structure. The method also includes establishing an electrically conductive material, such as a polycrystalline or single crystal copper material, on the substrate over the nanostructure to form a semiconductor assembly. The semiconductor assembly is then subjected to thermal process that causes the electrically conductive material to mold into the nanostructure established in the substrate to form an electrical interconnect that electrically connects the first semiconductor structure to the second semiconductor structure.

Dependencies are inferred from the claim text.