Semiconductor device

A semiconductor device, comprising:

• a substrate including a cell region and a peripheral region surrounding the cell region;
• a lower electrode extending in a vertical direction on the cell region of the substrate;
• an upper electrode surrounding a sidewall and a top surface of the lower electrode;
• a capacitor dielectric layer between the lower electrode and the upper electrode;
• a first barrier layer on the upper electrode, the first barrier layer being in contact with each of a sidewall and a top surface of the upper electrode, the first barrier layer being conformal on the upper electrode, and the first barrier layer including an aluminum element;
• and
• an etch stop layer between the substrate and the first barrier layer, the etch stop layer surrounding a portion of the sidewall of the lower electrode, and the etch stop layer being in contact with the first barrier layer on the peripheral region of the substrate.

A semiconductor device, comprising:

• a substrate including a cell region and a peripheral region surrounding the cell region;
• a lower electrode extending in a vertical direction on the cell region of the substrate;
• an upper electrode surrounding a sidewall and a top surface of the lower electrode;
• a capacitor dielectric layer between the lower electrode and the upper electrode;
• a first barrier layer on the upper electrode, the first barrier layer being in contact with each of a sidewall and a top surface of the upper electrode, the first barrier layer being conformally on the upper electrode, and the first barrier layer including at least one of aluminum oxide (Al2O3) and aluminum nitride (AlN);
• a first interlayer insulating layer covering the first barrier layer, the first interlayer insulating layer including a material different from a material of the first barrier layer;
• an etch stop layer between the substrate and the first barrier layer, the etch stop layer surrounding a portion of the sidewall of the lower electrode, and the etch stop layer being in contact with the first barrier layer on the peripheral region of the substrate;
• a first contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction, the first contact being connected to the upper electrode;
• and
• a second contact penetrating through the first barrier layer and the first interlayer insulating layer in the vertical direction on the peripheral region of the substrate, the second contact being spaced apart from the upper electrode in a horizontal direction, and top surfaces of the first interlayer insulating layer, the first contact, and the second contact being coplanar with each other.