System and method for diagnosing plasma chamber
AssigneeASM IP Holding B.V.
InventorImran Ahmed BHUTTA
Life of this patent
Estimating the term…
Abstract
In one embodiment, a system for determining a characteristic of the plasma chamber is disclosed. The system includes an impedance matching network, a sensor, and a control circuit. The control circuit stores one or more reference values for a parameter related to a semiconductor processing tool. A current value for the parameter is determined based on a signal received from the sensor. The control circuit then determines a characteristic of the plasma chamber based on a comparison of the current value for the parameter and the one or more reference values for the parameter.
Claims20
A system comprising:
- an impedance matching network configured to operably couple to a plasma chamber;
- a sensor;
- and
- a control circuit configured to carry out the operations of:
- storing one or more reference values for a parameter related to a semiconductor processing tool, the matching network and the plasma chamber forming part of the semiconductor processing tool;
- determining a current value for the parameter based on a signal received from the sensor;
- and
- determining a characteristic of the plasma chamber based on a comparison of the current value for the parameter and the one or more reference values for the parameter.
A method of determining a plasma chamber characteristic, the method comprising:
- storing one or more reference values for a parameter related to a semiconductor processing tool, the semiconductor processing tool comprising the plasma chamber and a matching network;
- determining a current value for the parameter based on a signal received from a sensor coupled to the tool;
- and
- determining a characteristic of the plasma chamber based on a comparison of the current value for the parameter and the one or more reference values for the parameter.
A semiconductor processing tool comprising:
- a plasma chamber configured to deposit a material onto a substrate or etch a material from the substrate;
- and
- an impedance matching network operably coupled to the plasma chamber;
- a sensor;
- and
- a control circuit configured to carry out the operations of:
- storing one or more reference values for a parameter related to the semiconductor processing tool;
- determining a current value for the parameter based on a signal received from the sensor;
- and
- determining a characteristic of the plasma chamber based on a comparison of the current value for the parameter and the one or more reference values for the parameter.
Dependencies are inferred from the claim text.