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US 2024/0177783 A1Published application
Semiconductor device for programming or erasing select transistors and method of operating the same
AssigneeSK hynix Inc.
InventorHyung Jin CHOI
Life of this patent
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Abstract
In a semiconductor memory device, a program voltage is applied to select lines, which are coupled to corresponding select transistors included in a plurality of string groups. A verify operation on the select transistors is then performed, which simultaneously checks the operation of first select transistors included in a first string group and second select transistors included in a second string group.
Claims20
A method of operating a semiconductor device, comprising:
- applying a program voltage to select lines, which are coupled to corresponding select transistors that comprise at least one string group of a plurality of string groups;
- and
- performing a verify operation on the select transistors,
- wherein performing the verify operation comprises:
- simultaneously performing a verify check operation on first select transistors that comprise a first string group, of the plurality of string groups, and applying a verify voltage to a select line coupled to second select transistors that comprise a second string group of the plurality of string groups.
2 more elements
A method of operating a semiconductor device, comprising:
- applying a program voltage to select lines, which are coupled to corresponding select transistors, which comprise first to N-th string groups;
- and
- performing a verify operation on the select transistors,
- wherein performing the verify operation comprises:
- simultaneously performing a verify check operation on i-th select transistors included in an i-th string group, of the first to N-th string groups, and an operation of applying a verify voltage to a select line coupled to (i+1)-th select transistors included in an (i+1)-th string group, where N is a natural number equal to or greater than 2, and i is a natural number equal to or greater than 1 and less than N.
2 more elements
A semiconductor device, comprising:
- a first string group comprising first select transistors;
- a second string group comprising second select transistors;
- a peripheral circuit comprising a plurality of page buffers, each peripheral circuit comprising a first latch circuit and a second latch circuit and which is configured to perform a program operation on the first and second select transistors;
- and
- a control logic configured to control the program operation of the peripheral circuit,
- wherein the control logic is configured to control the peripheral circuit to:
- apply a verify voltage to the first select transistors and then store results of verification of the first select transistors in first latch circuits of corresponding page buffers, respectively,
- store values, stored in the first latch circuits, in corresponding second latch circuits, respectively, and
- simultaneously perform an operation of storing the results of verification of the second select transistors in the first latch circuits, respectively, and a verify check operation on the first select transistors based on the values stored in the second latch circuits.
6 more elements
A method of operating a semiconductor device, comprising:
- applying an erase voltage to select transistors, which comprise first to N-th string groups;
- and
- performing a verify operation on the select transistors,
- wherein performing the verify operation comprises:
- simultaneously performing a verify check operation on i-th select transistors included in an i-th string group, of the first to N-th string groups, and an operation of applying a verify voltage to a select line coupled to (i+1)-th select transistors included in an (i+1)-th string group, where N is a natural number equal to or greater than 2, and i is a natural number equal to or greater than 1 and less than N.
2 more elements
Dependencies are inferred from the claim text.