Memory device and method of operating the same

Abstract

The present technology relates to an electronic device. According to the present technology, a memory device may include a plurality of memory cells, a read and write circuit, and a program controller. The plurality of memory cells may be connected to a plurality of channels passing through a plurality of word lines. The program controller may control the read and write circuit to perform a sensing operation on first memory cells and second memory cells among the plurality of memory cells during differently set sensing time periods. The first memory cells may be connected to first channels adjacent to a plurality of slits, among a plurality of channels separated by the plurality of slits. The second memory cells may be connected to second channels farther from the plurality of slits than the first channels.

Dependencies are inferred from the claim text.