Memory devices, circuits and methods of adjusting a sensing current for the memory device

A method of adjusting a sensing current for a memory device, comprising:

• outputting output data by a sense amplifier in response to a cell current sensed from a bit line of a memory array and a reference current flowing from a reference array;
• in response to the output data, selectively enabling or disabling one or more first clamping branches in a first clamping circuit coupled between the sense amplifier and the memory array, or one or more second clamping branches in a second clamping circuit coupled between the sense amplifier and the reference array.

The memory device of 17, wherein the feedback circuit comprises:

• a latch circuit configured to receive the output data and an activation signal, the activation signal being enabled when the output data is the most significant bit (MSB) data;
• and
• an adjusting circuit configured to output a plurality of control signals to selectively enable or disable one or more clamping branches in the first clamping circuit or in the second clamping circuit according to the output data when the activation signal is enabled.

The memory device of 18, wherein the adjusting circuit is configured to increase the reference current or lower the cell current in response to the output data being logical zero.

The memory device of 18, wherein the adjusting circuit is configured to increase the cell current or lower the reference current in response to the output data being logical one.