Film forming method, processing apparatus, and processing system

A film forming method of embedding a film in a recess that is formed in a substrate and has a narrow portion, the film forming method comprising:

• an operation (a) of forming the film in the recess under a condition that the film is formed thicker at an opening of the recess than at a bottom portion of the recess;
• an operation (b) of forming the film in the recess under a condition that the film is formed with a same thickness at both the bottom portion of the recess and the opening of the recess, or a condition that the film is formed thicker at the bottom portion of the recess than at the opening of the recess;
• and
• an operation (c) of partially etching the film formed in the recess,
• wherein multiple cycles, each of which includes the operation (b) and the operation (c), are performed.

A processing apparatus for performing a film forming method of embedding a film in a recess that is formed in a substrate and has a narrow portion, comprising:

• a processing container in which the substrate is accommodated;
• a gas supplier configured to supply a processing gas into the processing container;
• and
• a controller,
• wherein the controller is configured to control the gas supplier so as to execute:
• an operation (a) of forming the film in the recess under a condition that the film is formed thicker at an opening of the recess than at a bottom portion of the recess;
• an operation (b) of forming the film in the recess under a condition that the film is formed with a same thickness at both the bottom portion of the recess and the opening of the recess, or a condition that the film is formed thicker at the bottom portion of the recess than at the opening of the recess;
• and
• an operation (c) of partially etching the film formed in the recess, and
• wherein the controller is configured to control the gas supplier so as to execute multiple cycles, each of the multiple cycles including the operation (b) and the operation (c).

A processing system for performing a film forming method of embedding a film in a recess that is formed in a substrate and has a narrow portion, comprising:

• a first film-forming module configured to form the film in the recess under a condition that the film is formed thicker at an opening of the recess than at a bottom portion of the recess;
• a second film-forming module configured to form the film in the recess under a condition that the film is formed with a same thickness at both the bottom portion and the opening of the recess, or a condition that the film is formed thicker at the bottom portion of the recess than at the opening of the recess;
• an etching module configured to partially etch the film formed in the recess;
• and
• a transfer module configured to transfer the substrate between the first film-forming module, the second film-forming module, and the etching module under a depressurized atmosphere.