Methods for thinning substrates for semiconductor devices

A system, comprising:

• a grinding tool;
• a chemical mechanical polish (CMP) tool;
• and
• one or more processing devices connected to the grinding tool and the CMP tool, the one or more processing devices storing instructions, that when executed by the one or more processing devices, causes operations to be performed, the operations comprising:
• causing the grinding tool to perform a first grinding process to thin a device wafer from a first thickness to a second thickness, wherein at least one first grinding parameter associated with the first grinding process is adjusted during the performance of the first grinding process based on a first total thickness variation (TTV) of the device wafer;
• causing the grinding tool to perform a second grinding process to thin the device wafer from the second thickness to a third thickness, wherein at least one second grinding parameter associated with the second grinding process is adjusted during the performance of the second grinding process based on a second TTV of the device wafer;
• and
• causing the CMP tool to perform a CMP process to thin the device wafer from the third thickness to a fourth thickness, wherein at least one polishing parameter associated with the CMP process is adjusted during the performance of the CMP process based on a thickness profile for the device wafer.