Back side metallization thin film structure and method for forming the same

Abstract

A back side metallization thin film structure is provided, which includes a wafer and a metallic nano-twinned thin film on the back side of the wafer. A plurality of integrated circuit devices are formed on the front side of the wafer. The metallic nano-twinned thin film includes silver, copper, gold, palladium, or nickel. The metallic nano-twinned thin film has a transition layer near the wafer and a twin layer away from the wafer. The twin layer accounts for at least 70% of the thickness of the metallic nano-twinned thin film and includes parallel-arranged twin boundaries. The parallel-arranged twin boundaries include more than 50% of (111) crystal orientation. The back side metallization thin film structure is formed by activating the wafer surface by ion beam bombardment, followed by an evaporation deposition process performed on the activated wafer surface with simultaneous ion beam bombardment.

Dependencies are inferred from the claim text.