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US 2024/0170398 A1Published application
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsHiromichi TAKAOKA, Yoshiyuki SATO, Yuki FUJIMOTO
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Abstract
The dielectric film IF is disposed on the semiconductor substrate SB, and the plurality of electric fuse portions FU are disposed on the dielectric film IF. The n-type first well region WL1 is disposed in the semiconductor substrate SB and on the surface of the semiconductor substrate SB. The first well region WL1 is formed by integrally connecting the well region WLa located under each of the plurality of electric fuse portions FU to each other.
Claims12
A semiconductor device comprising:
- a semiconductor substrate;
- a dielectric film disposed on the semiconductor substrate;
- a plurality of electric fuse portions disposed on the dielectric film;
- and
- a first well region of a first conductivity type disposed in the semiconductor substrate and on a surface of the semiconductor substrate,
- wherein the first well region is configured by integrally connecting a well region located under each of the plurality of electric fuse portions to each other.
3 more elements
Dependencies are inferred from the claim text.