Molten silicon feeder for continuous czochralski single crystals
AssigneeShanghai Yinwan Photoelectric Technology Co., Ltd
InventorXin DING
Life of this patent
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Abstract
A molten silicon feeder for continuous czochralski single crystals includes an open crucible having a top opening located at the top and an injection port located in the lower part, the open crucible receiving and accommodating a solid silicon raw material; a heater for heating the open crucible, so that the solid silicon therein is melted, and injected below through the injection port at the bottom of the open crucible; a shell for enclosing and vacuum-sealing the overall structure of the molten silicon feeder.
Claims23
A molten silicon feeder for continuous czochralski single crystals, comprising:
- an open crucible having a top opening located at a top portion and an injection port located at a bottom portion, the open crucible receiving and accommodating a raw material of a solid silicon;
- a heater for heating the open crucible, so that the solid silicon therein is melted, and injected below through the injection port at the bottom portion of the open crucible;
- a shell for enclosing and vacuum-sealing an overall structure of the molten silicon feeder.
A hopper of molten silicon for continuous czochralski single crystals, comprising:
- a container for holding solid polysilicon raw materials;
- a bottom opening at a bottom portion of the container.
A continuous czochralski single crystal furnace that adjusts the oxygen content of monocrystalline silicon according to demand, comprising:
- a crucible;
- a device for lifting and rotating the crucible;
- a sealed shell for enveloping and vacuuming sealing of an overall structure of the continuous czochralski single crystal furnace;
- and
- an inner dam disposed in the crucible, having an opening in a lower part of the inner dam or an overflow gap on an upper edge of the inner dam, so that the convection inside and outside the dam is both isolated from each other and the liquid level is connected,
- wherein the inner dam isolates the crucible into:
- a high-oxygen volatile zone outside the inner dam and a single crystal growth area inside the inner dam, and a material of the inner dam is a non-oxide high-purity material resistant to molten silicon erosion, or the inner dam has a non-oxide silicon high-purity coating material resistant to molten silicon erosion.
Dependencies are inferred from the claim text.