A stepper lithography apparatus and operating method therefor, and pattern alignment device

A lithography pattern alignment device being provided in a photolithography apparatus, characterized in that said device includes:

• a wafer stage being used to carry wafer to be processed, wherein the wafer includes several wafer areas and an off-site area around the wafer areas, a photosensitive layer is provided on a surface of the wafer, and the photosensitive layer is provided with three-dimensional marks, and the three-dimensional marks have a region that is not on the same level as an upper surface of the photosensitive layer;
• a nano probe sensing device including a probe sensor, wherein the probe sensor is located over the photosensitive layer, and is used to move and scan in a scanning area and determine the coordinates of the three-dimensional marks in the scanning area;
• an exposure beam generating device being used to provide an exposure beam required for exposure of the wafer area, and form a projected exposure area on the photosensitive layer;
• a displacement actuating device being configured to adjust a relative position of the exposure beam generating device and the wafer stage according to the coordinates of the three-dimensional marks measured by the probe sensing device, so that the projected exposure area is aligned with an area of the wafer to be exposed.

An operating method of a stepper lithography apparatus, characterized in that the method comprises:

• preparation step, setting at least one bottom alignment mark on the wafer and coating a photosensitive layer on said wafer to be processed, said bottom alignment mark forming a three-dimensional mark on said photosensitive layer correspondingly;
• alignment step, placing the wafer provided with the three-dimensional mark in the preparation step in the lithography apparatus according to claim 47, a projection objective lens group are set close to the wafer in the lithography apparatus, and the projection objective lens group corresponds to a projection exposure area on the wafer, driving the wafer stage to place the first wafer area to be exposed under the projection objective lens group;
• scanning the photosensitive layer within a certain scanning area by using the probe sensor to obtain the coordinates of position of the first three-dimensional mark, comparing the coordinates of the position of the first three-dimensional mark with the reference coordinates of the first three-dimensional mark to obtain the difference between the two coordinates;
• the displacement actuating device adjusts the relative position of the exposure beam generating device and the wafer stage according to the difference between the two coordinates, so that the projected exposure area is aligned with the first wafer area;
• exposure step, the beam generating device emits an exposure beam to the first wafer area of the wafer to realize the exposure of the first wafer area.