Multi-storage element single-transistor crosspoint memory systems at low temperatures

An integrated circuit (IC) system, comprising:

• a power supply, the power supply coupled to an IC die, the IC die comprising:
• a plurality of storage lines extending in a first direction;
• a plurality of select transistors, wherein individual ones of the select transistors comprise a channel between a source and a drain, and individual ones of the sources or drains are coupled to individual ones of the storage lines;
• a plurality of source lines, the source lines extending in a second direction substantially orthogonal to the first direction;
• and
• an array of storage elements, wherein individual ones of the storage elements comprise a first electrode, a second electrode, and a storage layer therebetween, individual ones of the first electrodes are coupled to corresponding ones of the storage lines, and individual ones of the second electrodes are coupled to corresponding ones of the source lines.

A method, comprising:

• receiving a substrate, the substrate comprising a transistor;
• forming a storage line, the storage line coupled to a source or a drain of the transistor, and the storage line extending in a first direction;
• forming a plurality of storage elements over the storage line, wherein individual ones of the storage elements are coupled to the storage line, and individual ones of the storage elements comprise a first electrode, a second electrode, and a storage material therebetween;
• and
• forming a plurality of source lines over the storage elements, wherein the source lines extend in a second direction substantially orthogonal to the first direction, and individual ones of the source lines are coupled to corresponding ones of the storage elements.