US 2024/0008263 A1 · SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

Abstract

A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes: a substrate, bit line structures, and an isolation structure. The substrate includes multiple active areas. The bit line structures are located above the active areas, and include multiple bit lines extending in a first direction parallel to the surface of the substrate and multiple contact plugs electrically connected to the bit lines and the active areas. The isolation structure includes a first insulating layer including a first part and a second part located below the first part, a second insulating layer covering the surface of the second part and a third insulating layer covering at least the surface of the first part. The first part covers at least side walls of the bit lines, and the second part covers at least side walls of the contact plugs.

Claims15

Dependent claims

A semiconductor structure, comprising:

a substrate, which comprises a plurality of active areas;
bit line structures, which are located above the active areas and comprise a plurality of bit lines extending in a first direction and a plurality of contact plugs, wherein the contact plugs are electrically connected to the bit lines and the active areas, and the first direction is parallel to a surface of the substrate;
and
an isolation structure, which comprises a first insulating layer, a second insulating layer and a third insulating layer;
wherein the first insulating layer comprises a first part and a second part located below the first part;
the first part covers at least side walls of the bit lines, and the second part covers at least side walls of the contact plugs;
the second insulating layer covers a surface of the second part, and the third insulating layer covers at least a surface of the first part.

4 more elements

A method for manufacturing a semiconductor structure, comprising:

providing a substrate which comprises a plurality of active areas;
forming bit line structures which are electrically connected to the active areas;
wherein the bit line structures comprise a plurality of bit lines extending in a first direction and a plurality of contact plugs;
the contact plugs are electrically connected to the bit lines and the active areas;
and the first direction is parallel to a surface of the substrate;
and
forming an isolation structure which covers the bit line structures;
wherein the isolation structure comprises a first insulating layer, a second insulating layer and a third insulating layer;
the first insulating layer comprises a first part and a second part located below the first part;
the first part covers at least side walls of the bit lines, and the second part covers at least side walls of the contact plugs;
the second insulating layer covers a surface of the second part, and the third insulating layer covers at least a surface of the first part.

8 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and method for manufacturing same

Life of this patent

Semiconductor structure and method for manufacturing same

Life of this patent

Abstract

Claims15