Multifunctional MZO-Based Negative Capacitance Thin Film Transistor on Glass or Flexible Substrates

A negative capacitance thin film transistor (NC-TFT), comprising

• a substrate;
• a gate electrode,
• a ferroelectric layer deposited over the gate electrode and the substrate, wherein the ferroelectric layer comprises NixMgyZn1-x-yO, wherein Ni is used for doping to compensate residual electrons and x is greater than 0 and equal or less than 0.05;
• and Mg is used for ferroelectricity and y is greater than 0.05 and equal or less than 0.30;
• a dielectric insulating layer in contact with the ferroelectric layer to form a gate dielectric stack structure;
• a semiconductor MgzZn1-zO (MZO) channel layer deposited over the dielectric insulating layer, wherein z is greater than 0 and equal or less than 0.06, wherein the channel layer is in contact with the dielectric insulating layer or via a thin transition layer;
• a pair of source and drain contact electrodes deposited on opposite sides of the MZO channel layer.