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US 2024/0006491 A1Published application
Bipolar transistor with stepped emitter
AssigneeGlobalFoundries U.S. Inc.
InventorsUppili S. RAGHUNATHAN, Vibhor JAIN, Qizhi LIU, Yves T. NGU, Ajay RAMAN, Rajendran KRISHNASAMY, Alvin J. JOSEPH
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a stepped emitter and methods of manufacture. The structure includes: a collector; a base over the collector; and an emitter over the base, the emitter comprising at least one stepped feature over the base.
Claims20
A structure comprising:
- a collector;
- a base over the collector;
- and
- an emitter over the base, the emitter comprising at least one stepped feature over the base.
1 more element
A structure comprising:
- a semiconductor substrate;
- a collector in the semiconductor substrate;
- shallow trench isolation structures isolating the collector;
- a base comprising an intrinsic base over the collector and an extrinsic base adjacent to the intrinsic base;
- an emitter over the intrinsic base, the emitter comprising at least one raised mesa structure and a stepped feature on sides thereof;
- and
- a spacer separating the emitter from the base.
4 more elements
A method comprising:
- forming a collector;
- forming a base over the collector;
- and
- forming an emitter over the base, the emitter comprising at least one stepped feature over the base.
1 more element
Dependencies are inferred from the claim text.