Amorphization and regrowth of source-drain regions from the bottom-side of a semiconductor assembly

A method of fabricating a device, the method comprising:

• forming a channel having a top surface;
• forming a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of dopants;
• forming a second source-drain region adjacent a second portion of the channel, the second source-drain region including a second crystalline portion that includes a second region of dopants, wherein a part or all of the first crystalline portion and the second crystalline portion includes silicide or germanide, the silicide or germanide on a bottom surface of the first source-drain region and the second source-drain region, the bottom surface of the first source-drain region and the second source-drain region opposite the top surface of the channel;
• forming a gate conductor over the top surface of the channel;
• forming a first contact beneath the first source-drain region and in contact with the silicide or germanide on the bottom surface of the first source-drain region;
• and
• forming a second contact beneath the second source-drain region and in contact with the silicide or germanide on the bottom surface of the second source-drain region.

A system, comprising:

• one or more processing components;
• and
• one or more data storage components, at least one of the one or more processing components and the one or more data storage components including at least one device, the at least one device including:
• a channel;
• a first source-drain region adjacent a first portion of the channel, the first source-drain region including a first crystalline portion that includes a first region of metastable dopants;
• a second source-drain region adjacent a second portion of the channel, the second source-drain region including a second crystalline portion that includes a second region of metastable dopants;
• and
• a gate conductor on the channel.