Photoelectric conversion apparatus, equipment, layered structure
AssigneeCanon Kabushiki Kaisha
InventorsSHINYA ICHINO, TSUTOMU TANGE, KAZUKI OHSHITANAI
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AssigneeCanon Kabushiki Kaisha
InventorsSHINYA ICHINO, TSUTOMU TANGE, KAZUKI OHSHITANAI
Estimating the term…
A photoelectric conversion apparatus includes a first substrate including a photoelectric conversion element, and a second substrate including an amplification transistor and a selection transistor connected electrically to a source of the amplification transistor, the amplification transistor being configured to amplify electrons that are a signal charge output from the photoelectric conversion element. The photoelectric conversion element includes an n-type semiconductor region configured to store the electrons. The amplification transistor and the selection transistor are each a p-type metal oxide semiconductor (p-type MOS) transistor.
A photoelectric conversion apparatus comprising:
A layered structure comprising:
Dependencies are inferred from the claim text.