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US 2023/0422518 A1Published application
Memory device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsElia Ambrosi, Xinyu BAO, Cheng-Hsien Wu
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Abstract
A memory device is provided. The memory device includes memory cells. Each of the memory cells includes: a resistance variable storage device; and a selector. The selector is stacked with the resistance variable storage device and coupled to the resistance variable storage device with a shared terminal, and includes a switching layer formed of a chalcogenide compound. A thickness of the switching layer is equal to or less than about 5 nm.
Claims20
A memory device, comprising:
- memory cells, each comprising:
- a resistance variable storage device;
- and
- a selector, stacked with the resistance variable storage device and coupled to the resistance variable storage device with a shared terminal, and comprising a switching layer formed of a chalcogenide compound,
- wherein a thickness of the switching layer is equal to or less than about 5 nm.
2 more elements
A memory device, comprising:
- memory cells, each comprising:
- a resistance variable storage device;
- and
- a two-terminal selector, stacked with the resistance variable storage device and coupled to the resistance variable storage device, and comprising alternately stacked switching layers and buffer layers.
1 more element
A memory device, comprising:
- first signal lines, extending along a first direction;
- second signal lines, over the first signal lines and extending along a second direction;
- memory pillars, located at intersections of the first signal lines and the second signal lines, and respectively comprising a selector having a switching layer and a storage device overlapped with the selector and having a resistance variable layer,
- wherein and a thickness of the switching layer is equal to or less than about 5 nm.
1 more element
Dependencies are inferred from the claim text.