Method for manufacturing semiconductor structure, semiconductor structure and three-dimensional structure

A semiconductor structure, comprising:

• a substrate;
• a stack of a plurality of first semiconductor layers on the substrate, the plurality of first semiconductor layers being sequentially arranged in a direction perpendicular to a plane where the substrate is located, and a distance being provided between two adjacent ones of the first semiconductor layers, each of the first semiconductor layers comprising at least one second sub-part extending in a second direction and at least one first sub-part extending in a first direction, the first direction and the second direction being both parallel to the plane where the substrate is located and perpendicular to each other;
• wherein the first sub-part comprises a first section away from the second sub-part and a second section in contact with the second sub-part;
• and
• a first dielectric layer filling a gap between two adjacent ones of first sections.

A semiconductor structure, comprising:

• a substrate;
• a plurality of second sub-parts located above the substrate, the plurality of second sub-parts being sequentially arranged in a direction perpendicular to a plane where the substrate is located, and a distance being provided between two adjacent ones of the second sub-parts;
• wherein the second sub-parts extend in a second direction parallel to the plane where the substrate is located;
• and
• a plurality of conductive lines, each of the conductive lines covering part of exterior surfaces of the second sub-parts.