Photonic device with improved heat dissipation for iii-v/si heterogeneous laser and associated manufacturing method

A method for manufacturing a photonic device, comprising:

• a) providing a silicon-on-insulator substrate comprising a mono-crystalline silicon surface layer having a front face and a rear face, a buried dielectric layer disposed adjacent the rear face of the surface layer, and a base substrate;
• b) providing a support layer;
• c) providing an optical layer comprising:
• a first optical waveguide in a first region, the waveguide being formed in the surface layer, and
• a second optical waveguide, in a second region;
• d) forming an intermediate layer disposed on the optical layer or on the support layer or partially on the optical layer and partially on the support layer, the intermediate layer comprising a thermally conductive material forming a single-piece block, and an optical and/or electrical cladding material;
• e) assembling the silicon-on-insulator substrate and the support layer along a bonding interface, the intermediate layer being disposed between the support layer and the optical layer, the thermally conductive material being arranged in line with the first region and the optical and/or electrical cladding material being arranged in line with the second region;
• f) removing the base substrate;
• and
• g) forming a stack of III-V semiconductor compounds on the dielectric layer, in the first region.