Semiconductor light emitting device

A semiconductor light emitting device, comprising:

• a light emitting structure comprising:
• a first conductivity-type semiconductor layer comprising an upper surface having a main region and a peripheral region surrounding the main region,
• an active layer, and
• a second conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being provided in sequence on the main region;
• a transparent electrode layer provided on the second conductivity-type semiconductor layer;
• an insulating layer provided on the light emitting structure and covering the transparent electrode layer;
• a distributed Bragg reflector (DBR) layer provided on the insulating layer, the DBR layer comprising:
• a first insulating film having a first refractive index;
• and
• a second insulating film having a second refractive index that is different from the first refractive index, wherein each of the insulating layer and the DBR layer comprises a plurality of holes connected to a contact region of the transparent electrode layer;
• a reflective electrode layer provided on the DBR layer, and connected to the contact region of the transparent electrode layer through the plurality of holes, the reflective electrode layer comprising an extended portion provided on the peripheral region of the first conductivity-type semiconductor layer and extending to the DBR layer region, wherein the extended portion is spaced apart from each edge of the first conductivity-type semiconductor layer by a first distance;
• a second insulating layer provided on the DBR layer and covering the reflective electrode layer, the second insulating layer comprising at least one opening exposing one region of the reflective electrode layer;
• and
• a connection electrode provided on the second insulating layer and connected to the reflective electrode layer through the at least one opening of the second insulating layer.

A semiconductor light emitting device, comprising:

• a light emitting structure comprising:
• a first conductivity-type semiconductor layer comprising an upper surface having a main region and a peripheral region surrounding the main region,
• an active layer, and
• a second conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being provided in sequence on the main region, wherein the peripheral region has a width of at least about 10 μm;
• a transparent electrode layer provided on the second conductivity-type semiconductor layer;
• a first insulating layer provided on the light emitting structure, and covering the transparent electrode layer;
• a second insulating layer provided on the first insulating layer and comprising a material different from a material of the first insulating layer, wherein each of the first insulating layer and the second insulating layer comprises a plurality of holes connected to a contact region of the transparent electrode layer;
• a reflective electrode layer provided on the second insulating layer, and connected to the contact region of the transparent electrode layer through the plurality of holes, the reflective electrode layer comprising an extended portion extending to a region of the second insulating layer provided on the peripheral region of the first conductivity-type semiconductor layer, wherein the extended portion is spaced apart from each edge of the first conductivity-type semiconductor layer by at least about 5 μm;
• a third insulating layer provided on the second insulating layer and covering the reflective electrode layer, the third insulating layer comprising at least one opening exposing one region of the reflective electrode layer;
• and
• a connection electrode provided on the third insulating layer and connected to the reflective electrode layer through the at least one opening of the third insulating layer.