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US 2023/0420606 A1Published application
Method for manufacturing terahertz device
AssigneeNational Tsing Hua University
InventorsShang-Hua Yang, Wang-Chien Chen, Tsung-Han Wu
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Abstract
The present disclosure provides a method for manufacturing a terahertz (THz) device. The method includes a step of forming a light-absorbing structure on a substrate by using a chemical vapor deposition (CVD) process. The substrate includes a semiconductor structure, a sapphire substrate, a quartz substrate, or a combination thereof. The light-absorbing structure includes a semiconductor material, a two-dimensional material, a low-dimensional material, a magnetic material, a topological material, or a combination thereof.
Claims10
A method for manufacturing a terahertz (THz) device, comprising:
- forming a light-absorbing structure on a substrate by using a chemical vapor deposition (CVD) process, wherein:
- the substrate comprises a semiconductor substrate, sapphire substrate, a quartz substrate, or a combination thereof;
- and
- the light-absorbing structure comprises a semiconductor material, a two-dimensional material, a low-dimensional material, a magnetic material, a topological material, or a combination thereof.
1 more element
Dependencies are inferred from the claim text.