US 2023/0420560 A1 · SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

Abstract

A semiconductor device and a method for forming the same are provided. The semiconductor device includes a semiconductor substrate, a well region, an isolation structure, a gate structure and a field doped region. The well region having a first conductivity type is disposed in the semiconductor substrate. The gate structure extends to cover a portion of the isolation structure in the well region. The field doped region having a second conductivity type is disposed on the well region. The field doped region has a first portion overlapping the isolation structure and a second portion that is connected to the first portion and away from the gate structure. A first depth between a bottom surface of the first portion and a top surface of the semiconductor structure is greater than a second depth between a bottom surface of the second portion and the top surface of the semiconductor structure.

Claims20

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate;
a well region having a first conductivity type disposed in the semiconductor substrate,
an isolation structure disposed on the semiconductor substrate in the well region;
a gate structure disposed on the semiconductor substrate in the well region and extending to cover a portion of the isolation structure;
and
a field doped region having a second conductivity type disposed on the well region, wherein the field doped region has a first portion overlapping the isolation structure and a second portion connected to the first portion and disposed away from the gate structure, a first depth between a bottom surface of the first portion and a top surface of the semiconductor structure is greater than a second depth between a bottom surface of the second portion and the top surface of the semiconductor structure.

3 more elements

The method for forming a semiconductor device, comprising:

forming a first well region in a semiconductor substrate;
forming a pad oxide layer and insulating patterns on the semiconductor substrate;
performing a first field doping process on the semiconductor substrate to form a first portion of a first field doped region in the first well region that is not covered by the insulating patterns and a second portion of the first field doped region in the first well region covered by the insulating patterns, wherein a first depth between a first bottom surface of the first portion of the first field doped region and the top surface of the semiconductor substrate is greater than a second depth between a second bottom surface of the second portion of the first field doped region and the top surface of the semiconductor substrate;
performing a thermal oxidation process to grow the pad oxide layer that is not covered by the insulating patterns in the first well region into a first isolation structure;
removing the insulating patterns;
and
forming a first gate structure on the semiconductor substrate in the first well region, wherein the first gate structure extends to cover portions of the first isolation structure and the first portion of the first field doped region.

4 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method for forming the same

Life of this patent

Semiconductor device and method for forming the same

Life of this patent

Abstract

Claims20