Photoelectric conversion device

A photoelectric conversion device including a plurality of pixels arranged in a semiconductor layer comprising a first main surface and a second main surface on an opposite side of the first main surface, wherein

• each of the plurality of pixels comprises:
• a first photodiode including a first region of a first conductivity type where signal charges are accumulated;
• a second photodiode arranged between the first region and the second main surface so as to at least partially overlap the first region in an orthogonal projection with respect to the first main surface, and including a second region of the first conductivity type where signal charges are accumulated;
• a third region of a second conductivity type opposite to the first conductivity type arranged between the first region and the second region;
• and
• a first electrode arranged on the first main surface so as to cover the first region, and
• signal charges accumulated in the second region are transferred to the first region via a transfer portion formed in the third region by controlling a potential of the first electrode.