Power semiconductor module arrangement and method for forming the same
OwnerTimo Bohnenberger, Alexander Heinrich +1inventors
InventorsTimo Bohnenberger, Alexander Heinrich, Catharina Wille
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Abstract
A power semiconductor module arrangement includes a power semiconductor module. The power semiconductor module includes a substrate and a heat-conducting layer arranged on a lower surface of the power semiconductor module. The lower surface of the power semiconductor module is a surface that is configured to be mounted to a heat sink. The heat-conducting layer includes a metallic foam and an eutectic material filling cavities within the metallic foam.
Claims20
A power semiconductor module arrangement comprising a power semiconductor module, wherein the power semiconductor module comprises:
- a substrate;
- and
- a heat-conducting layer arranged on a lower surface of the power semiconductor module,
- wherein the lower surface of the power semiconductor module is a surface that is configured to be mounted to a heat sink,
- wherein the heat-conducting layer comprises a metallic foam and a layer of eutectic material,
- wherein the layer of eutectic material is configured to liquify upon heating so as to fill cavities within the metallic foam.
A method for producing a power semiconductor module arrangement, the method comprising:
- arranging a layer of solid eutectic material on a lower surface of a power semiconductor module, the lower surface of the power semiconductor module being configured to be mounted to a heat sink;
- and
- arranging a metallic foam on the layer of eutectic material,
- wherein the layer of eutectic material is configured to fill cavities within the metallic foam when heated.
A method for producing a power semiconductor module arrangement, the method comprising:
- pressing a metallic foam into a layer of eutectic material;
- heating the layer of eutectic material so that the eutectic material liquefies and soaks into the metallic foam so as to form a heat-conducting layer;
- and
- attaching the heat-conducting layer to a lower surface of a power semiconductor module.
Dependencies are inferred from the claim text.