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US 2023/0420309 A1Published application
Method of forming silicon within a gap on a surface of a substrate
AssigneeASM IP Holding B.V.
InventorsOmar Elleuch, Robinson James, Peter Westrom, Caleb Miskin, Alexandros Demos
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Abstract
A method of forming silicon within a gap on a surface of a substrate. The method includes use of two or more pyrometers to measure temperatures at two or more positions on a substrate and/or a substrate support and a plurality of heaters that can be divided into zones of heaters, wherein the heaters or zones of heaters can be independently controlled based on the measured temperatures and desired temperature profiles.
Claims20
A method of forming silicon within a gap on a surface of a substrate, the method comprising:
- providing the substrate within a reaction chamber of a reactor, the reactor comprising a first zone of one or more heaters and a second zone of one or more heaters;
- and
- selectively forming epitaxial silicon on a bottom surface of the gap relative to a sidewall of the gap,
- wherein during the step of selectively forming epitaxial silicon, the method further comprises:
- measuring one or more first substrate temperatures at a first substrate location using a first pyrometer;
- measuring one or more second substrate temperatures at a second substrate location using a second pyrometer;
- responsive to the step of measuring one or more first substrate temperatures, independently controlling the first zone of one or more heaters;
- and
- responsive to the step of measuring one or more second substrate temperatures, independently controlling the second zone of one or more heaters.
6 more elements
Dependencies are inferred from the claim text.