Enhanced power and signal for stacked-fets

A semiconductor structure comprising:

• a stacked field effect transistor having a top field effect transistor located above a bottom field effect transistor, wherein the bottom field effect transistor has a first channel region having a first channel width and the top field effect transistor has a second channel region having a second channel width that is different from the first channel width, and wherein the first channel region of the bottom field effect transistor and the second channel region of the top field effect transistor share a common sidewall;
• a first contact structure contacting a source/drain region of the bottom field effect transistor and extending laterally away from the common sidewall;
• and
• a power rail in electrical contact with the first contact structure.