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US 2023/0420290 A1Published application
Method of manufacturing semiconductor device including isolation structure with nitridation layer
AssigneeNanya Technology Corporation
InventorYING-CHENG CHUANG
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Abstract
A method of manufacturing a semiconductor device is provided. The method includes providing a substrate. The method also includes forming a first trench within the substrate. The method further includes forming a first nitridation layer within the first trench. In addition, the method includes forming a first isolation layer on the first nitridation layer to form a first isolation structure.
Claims19
A method of manufacturing a semiconductor device, comprising:
- providing a substrate having a first region and a second region;
- forming a first isolation structure within the first region of the substrate;
- and
- forming a second isolation structure within the second region of the substrate,
- wherein a first composition of the first isolation structure is different form a second composition of the second isolation structure.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming a first trench within the substrate;
- forming a first nitridation layer within the first trench;
- and
- forming a first isolation layer on the first nitridation layer to form a first isolation structure.
2 more elements
Dependencies are inferred from the claim text.