Method of depositing atomic layer and method of manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsHyunjun AHN, Hongtaek Lim, Kyoungwoo Hong, Hanhim Kang, Yeongyeop Song
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Abstract
A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H2) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.
Claims21
A method of depositing an atomic layer of a metal-containing film, the method comprising:
- a plurality of deposition cycles, each of the plurality of deposition cycles including, adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber,
- treating a wafer on which the hydrogen-containing compound is adsorbed with hydrogen (H2) gas, and
- providing a metal precursor to the wafer to react with the hydrogen-containing compound to form the metal-containing film.
A method of manufacturing a semiconductor device, the method comprising:
- performing a plurality of deposition cycles to form a metal-containing film or a silicon-containing film, each of the plurality of deposition cycles including,
- supplying a first gas including a hydrogen-containing compound to a chamber in which a wafer is loaded,
- supplying a second gas to the chamber, and
- supplying a third gas including a precursor including metal or silicon to the chamber,
- wherein the precursor reacts with the hydrogen-containing compound to form the metal-containing or silicon-containing film, and
- the second gas hydrogenates the hydrogen-containing compound.
A method of depositing an atomic layer, the method comprising:
- depositing a hydrogen-containing compound on a surface of a wafer;
- treating the hydrogen-containing compound with hydrogen gas;
- and
- reacting the hydrogen-containing compound treated by the hydrogen gas with a precursor including titanium to form a film on the surface of the wafer.
21-25. (canceled)
Dependencies are inferred from the claim text.