Dynamic multi zone flow control for a processing system

A method for processing a substrate comprising:

• a) introducing a first gas and a second gas to a processing volume of a process chamber during a first time period to deposit a first layer on a substrate positioned on a substrate support in the processing volume, wherein
• the first gas is introduced to the processing volume by flowing the first gas along a path that extends through a first plenum and a second plenum, the second plenum fluidly coupled to the processing volume,
• the first plenum is a ring-shaped plenum,
• a gas distribution plate is positioned between the first plenum and the second plenum, and
• the second gas is introduced to the processing volume by flowing the second gas through a conduit that extends through a central cavity of the gas distribution plate to the second plenum.

A method for processing a substrate comprising:

• a) introducing a first gas and a second gas to a processing volume of a process chamber during a first time period to deposit an oxide layer on a substrate positioned on a substrate support in the processing volume, wherein
• the first gas is introduced to the processing volume by flowing the first gas along a first path that extends through a first plenum and a second plenum, the second plenum fluidly coupled to the processing volume,
• a gas distribution plate is positioned between the first plenum and the second plenum, and
• the second gas is introduced to the processing volume by flowing the second gas along a second path through a conduit that extends through a central cavity of the gas distribution plate to the second plenum;
• and
• b) introducing a third gas and a fourth gas to a processing volume of a process chamber during a second time period to deposit a nitride layer over the oxide layer, wherein
• the third gas is introduced to the processing volume by flowing along the first path, and
• the fourth gas is introduced to the processing volume by flowing along the second path.