Plasma Processing Method and Plasma Processing Apparatus

A plasma processing method for performing plasma processing to a substrate in a plasma processing apparatus, the plasma processing apparatus including

• a chamber,
• a substrate support that is provided in the chamber, includes a lower electrode, and is configured to support the substrate, and
• an upper electrode that is provided in the chamber to face the lower electrode, the substrate support being provided between the upper electrode and the lower electrode,
• the plasma processing method comprising:
• disposing a substrate on the substrate support;
• supplying, into the chamber, a processing gas for processing the substrate;
• forming a plasma from the processing gas between the upper electrode and the lower electrode by supplying a first RF having a first frequency to the upper electrode or the lower electrode;
• and
• controlling an electric field formed between the upper electrode or the lower electrode and the plasma by supplying a second RF having a second frequency lower than the first frequency to the upper electrode or the lower electrode, wherein
• forming the plasma includes controlling the supply of the first RF based on a phase of the second RF.