Non-volatile memory with precise programming

A non-volatile storage apparatus, comprising:

• non-volatile memory cells;
• bit lines connected to the non-volatile memory cells;
• word lines connected to the non-volatile memory cells;
• and
• a control circuit connected to the non-volatile memory cells via the bit lines and the word lines, in order to program non-volatile memory cells the control circuit is configured to apply a series of voltage pulses to a selected word line connected to a set of non-volatile memory cells selected for programming such that each of the voltage pulses include a first portion, a second portion subsequent to the first portion and a third portion subsequent to the second portion;
• for a particular voltage pulse of the series of voltage pulses, the control circuit is configured to
• apply a first programming inhibit voltage during the first portion of the particular voltage pulse, apply the first programming inhibit voltage during the second portion of the particular voltage pulse, and apply the first programming inhibit voltage during the third portion of the particular voltage pulse to bit lines connected to memory cells having threshold voltages above a target magnitude prior to the particular voltage pulse;
• apply a first programming enable voltage during the first portion of the particular voltage pulse, during the second portion of the particular voltage pulse and during the third portion of the particular voltage pulse to bit lines connected to memory cells having threshold voltages below a first magnitude prior to the particular voltage pulse;
• apply a second programming enable voltage during the first portion of the particular voltage pulse, apply the second programming enable voltage during the second portion of the particular voltage pulse, and apply a second programming inhibit voltage during the third portion of the particular voltage pulse to bit lines connected to memory cells having threshold voltages above the first magnitude and below a second magnitude prior to the particular voltage pulse;
• and
• apply a third programming enable voltage during the first portion of the particular voltage pulse, apply a third programming inhibit voltage during the second portion of the particular voltage pulse, and apply the third programming inhibit voltage during the third portion of the particular voltage pulse to bit lines connected to memory cells having threshold voltages above the second magnitude and below the target magnitude prior to the particular voltage pulse.

A non-volatile storage apparatus, comprising:

• a memory structure comprising non-volatile memory cells;
• and
• a control circuit connected to the memory structure, the control circuit is configured to:
• apply a voltage pulse to a set of non-volatile memory cells selected for programming, the voltage pulse including a first portion and a second portion subsequent to the first portion;
• allow programming during the first portion of the voltage pulse and during the second portion of the voltage pulse for memory cells having threshold voltages below a first magnitude prior to the voltage pulse;
• allow programming during the first portion of the voltage pulse and inhibiting programming during the second portion of the voltage pulse for memory cells having threshold voltages above the first magnitude and below a second magnitude prior to the voltage pulse;
• and
• inhibiting programming during the first portion of the voltage pulse and during the second portion of the voltage pulse for memory cells having threshold voltages above the second magnitude prior to the voltage pulse.