Method of manufacturing a semiconductor device and semiconductor device manufacturing tool

A method of manufacturing a semiconductor device, comprising:

• forming a photoresist layer comprising a photoresist composition over a substrate;
• patternwise exposing the photoresist layer to actinic radiation;
• baking the photoresist layer after patternwise exposing the photoresist layer to actinic radiation,
• flowing a gas over the photoresist layer during the baking the photoresist layer,
• wherein during the flowing a gas over the photoresist layer, the gas is supplied to a space over the photoresist layer at a first flowrate from a gas showerhead located over a main surface of the photoresist layer, and
• the gas is exhausted from the space over the photoresist layer through one or more gas exhausts located adjacent a periphery of the showerhead,
• wherein the gas is exhausted from the space over the photoresist layer at a second flowrate for a first time period and then exhausted at a third flowrate for a second time period,
• wherein the third flowrate is greater than the second flowrate;
• and
• developing the photoresist layer after the baking the photoresist layer to form a pattern in the photoresist layer.

A semiconductor device manufacturing tool, comprising:

• a processing chamber;
• a wafer support disposed inside the processing chamber;
• a heating element disposed inside the wafer support;
• a gas manifold disposed over the wafer support,
• wherein the gas manifold comprises:
• a plurality of first openings in a surface of the gas manifold facing the wafer support configured to direct a gas flowing through the first openings towards the wafer support, and
• one or more second openings configured to exhaust the gas away from wafer support,
• wherein the one or more second openings are located in a peripheral portion of the gas manifold or in a central portion of the gas manifold;
• and
• a controller configured to control:
• a flowrate of the gas flowing through the first openings;
• a flowrate of the gas flowing through the one or more second openings;
• and
• a temperature of the heating element.